(China (Mainland))
Product Summary
The N-Channel enhancement mode power field effect transistor FQPF7N65C is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF7N65C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQPF7N65C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 650 V; (2)ID Drain Current - Continuous (TC = 25℃): 7 * A; (3)- Continuous (TC = 100℃): 4.2 * A; (4)IDM Drain Current - Pulsed (Note 1): 28 * A; (5)VGSS Gate-Source Voltage: ± 30 V; (6)EAS Single Pulsed Avalanche Energy: 212 mJ; (7)IAR Avalanche Current: 7 A; (8)EAR Repetitive Avalanche Energy: 1.6 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (10)PD Power Dissipation (TC = 25℃): 52 W; (11)- Derate above 25℃: 0.42 W/℃; (12)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (13)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF7N65C features: (1)7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF7N65C |
Fairchild Semiconductor |
MOSFET 650V N-Channel Adv Q-FET C-Series |
Data Sheet |
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FQPF7N65C_F105 |
Fairchild Semiconductor |
MOSFET 650V N-Chan Advance Q-FET C-Series |
Data Sheet |
Negotiable |
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FQPF7N65CYDTU |
Fairchild Semiconductor |
MOSFET 650V N-Ch Advance Q-FET C-Series |
Data Sheet |
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